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Conduction studies on chemical bath-deposited nanocrystalline CdS thin films

Identifieur interne : 007D48 ( Main/Repository ); précédent : 007D47; suivant : 007D49

Conduction studies on chemical bath-deposited nanocrystalline CdS thin films

Auteurs : RBID : Pascal:07-0334094

Descripteurs français

Pascal (Inist)
- Nanocristal, Couche mince, Dépôt bain chimique, Silicium, Indium oxyde, Etain oxyde, Température ambiante, Réseau hexagonal, Orientation préférentielle, Propriété électronique, Conduction saut, Couche épaisse, Conduction limitée charge espace, Tension polarisation, Cadmium sulfure, Polycristal, Semiconducteur II-VI, Cellule solaire, Si, Substrat Si, Substrat InSnO, 8107, 7320, 8105D.

English descriptors

KwdEn :
- Ambient temperature, Bias voltage, Cadmium sulfides, Chemical bath deposition, Electronic properties, Hexagonal lattices, Hopping conduction, II-VI semiconductors, Indium oxides, Nanocrystal, Polycrystals, Preferred orientation, Silicon, Solar cells, Space-charge-limited conduction, Thick films, Thin films, Tin oxides.

Abstract

Chemically pure, stoichiometric cadmium sulphide (CdS) films were produced by the chemical bath deposition (CBD) method on suitably cleaned silicon (Si) wafer and indium-tin oxide (ITO) substrates at room temperature. The nanocrystalline film was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. Variable-range hopping conduction through 66 nm thick CdS films on ITO substrates was found to be responsible at the low voltage while space charge-limited conduction became dominant at a relatively high bias voltage.

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Pascal:07-0334094

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Conduction studies on chemical bath-deposited nanocrystalline CdS thin films</title>
<author><name sortKey="Pradhan, Basudev" uniqKey="Pradhan B">Basudev Pradhan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Solid State Physics, Indian Association for the Cultivation of Science</s1>
<s2>Kolkata 700032</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Kolkata 700032</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sharma, Ashwani K" uniqKey="Sharma A">Ashwani K. Sharma</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Space Vehicles Directorate, Air Force Research Laboratory. 3550 Aberdeen Avenue, SE Kirtland AFB</s1>
<s2>NM 87117</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ray, Asim K" uniqKey="Ray A">Asim K. Ray</name>
<affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Nanotechnology Research Laboratories, Department of Materials, Queen Mary University of London</s1>
<s2>London El 4NS</s2>
<s3>GBR</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>London El 4NS</wicri:noRegion>
<orgName type="university">Université de Londres</orgName>
<placeName><settlement type="city">Londres</settlement>
<region type="country">Angleterre</region>
<region type="région" nuts="1">Grand Londres</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">07-0334094</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0334094 INIST</idno>
<idno type="RBID">Pascal:07-0334094</idno>
<idno type="wicri:Area/Main/Corpus">007976</idno>
<idno type="wicri:Area/Main/Repository">007D48</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term>
<term>Bias voltage</term>
<term>Cadmium sulfides</term>
<term>Chemical bath deposition</term>
<term>Electronic properties</term>
<term>Hexagonal lattices</term>
<term>Hopping conduction</term>
<term>II-VI semiconductors</term>
<term>Indium oxides</term>
<term>Nanocrystal</term>
<term>Polycrystals</term>
<term>Preferred orientation</term>
<term>Silicon</term>
<term>Solar cells</term>
<term>Space-charge-limited conduction</term>
<term>Thick films</term>
<term>Thin films</term>
<term>Tin oxides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Nanocristal</term>
<term>Couche mince</term>
<term>Dépôt bain chimique</term>
<term>Silicium</term>
<term>Indium oxyde</term>
<term>Etain oxyde</term>
<term>Température ambiante</term>
<term>Réseau hexagonal</term>
<term>Orientation préférentielle</term>
<term>Propriété électronique</term>
<term>Conduction saut</term>
<term>Couche épaisse</term>
<term>Conduction limitée charge espace</term>
<term>Tension polarisation</term>
<term>Cadmium sulfure</term>
<term>Polycristal</term>
<term>Semiconducteur II-VI</term>
<term>Cellule solaire</term>
<term>Si</term>
<term>Substrat Si</term>
<term>Substrat InSnO</term>
<term>8107</term>
<term>7320</term>
<term>8105D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Chemically pure, stoichiometric cadmium sulphide (CdS) films were produced by the chemical bath deposition (CBD) method on suitably cleaned silicon (Si) wafer and indium-tin oxide (ITO) substrates at room temperature. The nanocrystalline film was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. Variable-range hopping conduction through 66 nm thick CdS films on ITO substrates was found to be responsible at the low voltage while space charge-limited conduction became dominant at a relatively high bias voltage.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>304</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Conduction studies on chemical bath-deposited nanocrystalline CdS thin films</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>PRADHAN (Basudev)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SHARMA (Ashwani K.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>RAY (Asim K.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Solid State Physics, Indian Association for the Cultivation of Science</s1>
<s2>Kolkata 700032</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Space Vehicles Directorate, Air Force Research Laboratory. 3550 Aberdeen Avenue, SE Kirtland AFB</s1>
<s2>NM 87117</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Nanotechnology Research Laboratories, Department of Materials, Queen Mary University of London</s1>
<s2>London El 4NS</s2>
<s3>GBR</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>388-392</s1>
</fA20>
<fA21><s1>2007</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000149911040160</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>20 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>07-0334094</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Chemically pure, stoichiometric cadmium sulphide (CdS) films were produced by the chemical bath deposition (CBD) method on suitably cleaned silicon (Si) wafer and indium-tin oxide (ITO) substrates at room temperature. The nanocrystalline film was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. Variable-range hopping conduction through 66 nm thick CdS films on ITO substrates was found to be responsible at the low voltage while space charge-limited conduction became dominant at a relatively high bias voltage.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07Z</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C20</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dépôt bain chimique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Chemical bath deposition</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Depósito baño químico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>05</s5>
</fC03>
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<s2>NK</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Etain oxyde</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Tin oxides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>07</s5>
</fC03>
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<s5>07</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Hexagonal lattices</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Orientation préférentielle</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Preferred orientation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Orientación preferencial</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Propriété électronique</s0>
<s5>10</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Propiedad electrónica</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Conduction saut</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Hopping conduction</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Couche épaisse</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Thick films</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Conduction limitée charge espace</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Space-charge-limited conduction</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Tension polarisation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Bias voltage</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Voltage polarización</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Cadmium sulfure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Cadmium sulfides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>II-VI semiconductors</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Cellule solaire</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Solar cells</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Substrat Si</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Substrat InSnO</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7320</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8105D</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>218</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Conduction studies on chemical bath-deposited nanocrystalline CdS thin films

Conduction studies on chemical bath-deposited nanocrystalline CdS thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri